The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Jul. 08, 1998
Applicant:
Inventor:
Koichi Fujita, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257349 ; 257348 ; 257349 ; 257350 ; 257351 ; 257352 ; 257353 ; 257354 ; 257 59 ; 257 72 ;
Abstract
A high frequency MOSFET device includes a Silicon-On-Insulator substrate. The MOSFET device has a source electrode connected to the substrate by a conductive region penetrating the insulator layer for dissipating heat from the drive section of an MOSFET to the substrate. The conductive region may be in a grid pattern or lattice configuration, surrounding the drive section of each MOSFET on the SOI substrate, opposite the source electrode of the MOSFET.
Fujita, Koichi. (1999). High-frequency mosfet (U.S. Patent No. 6002154). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6002154
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile