The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Oct. 21, 1997
Clinton L Lingren, San Diego, CA (US);
Digirad Corporation, San Diego, CA (US);
Abstract
A cross-strip radiation detector for detecting ionizing radiation. The detector includes a semiconductor having at least two sides, a radiation side and an opposing signal collecting side. A plurality of parallel radiation-side electrode strips are formed on the radiation side of the semiconductor. Multiple of signal-collecting-side electrodes are formed on a signal collecting side of the semiconductor and are connected to form a plurality of parallel signal strips that are not parallel to the radiation-side electrode strips. For common semiconductors, anodes are used to detect the energy level of the ionizing radiation. The signals from the cathode strips are used in conjunction with the signals from the anodes to determine the location of an ionizing event. At least one additional electrode, a control electrode, may also be formed on the semiconductor to alter the electric field within the semiconductor to improve the collection efficiency of the signal electrode. A high-voltage decoupling circuit is implemented on the signal collecting side with high-voltage capacitors arranged in a cord-wood configuration to allow for all-side buttability. A thin circuit layer is formed on a lateral side of the semiconductor to transfer the signals from the radiation side to the signal collecting side. A shield electrode may also be formed on the signal collecting side and be capacitively coupled to the semiconductor to reduce the effect on the anodes of charge trapping in the semiconductor.