The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Mar. 24, 1998
Applicant:
Inventors:
A J Chang, Taichung, TW;
Chih-Hsun Chu, Hsinchu, TW;
Assignee:
Mosel Vitelic Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438299 ; 438300 ; 438301 ; 438672 ; 438692 ; 438564 ;
Abstract
A method of manufacturing a raised source/drain semiconductor device is disclosed. When the shallow junction technique is applied, over etching of the source/drain regions during contact etching and salicide processing will lead to current leakage. The invention provides a method which comprises depositing a buffer conductive layer above the substrate and removing a portion of this layer to form buffer conductive blocks on the source/drain regions which increase the thickness of source/drain regions.
Chang, A. (1999). Process for manufacturing semiconductor devices having raised doped (U.S. Patent No. 6001697). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6001697
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile