The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Jan. 20, 1998
Georg Bogner, Regensburg, DE;
Herbert Brunner, Regensburg, DE;
Heinz Haas, Regensburg, DE;
Johann Luft, Wolfsegg, DE;
Ernst Nirschl, Wenzenbach, DE;
Werner Spaeth, Holzkirchen, DE;
Norbert Stath, Regensburg, DE;
Wolfgang Teich, Regensburg, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.