The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Jun. 25, 1998
Applicant:
Inventor:
Masato Kawata, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ;
U.S. Cl.
CPC ...
36518518 ; 36518503 ; 257316 ; 257321 ;
Abstract
A nonvolatile semiconductor memory includes a memory cell constituted by at least first and second floating gates, first and second control gates, and a source and a drain. The first floating gate is formed on a semiconductor substrate through a gate insulating film. The second floating gate is formed on a region without the first floating gate via the gate insulating film. The first control gate is formed on the first floating gate via an insulating film. The second control gate is formed on the second floating gate via the insulating film. The source and the drain are formed in the semiconductor substrate to sandwich the first and second floating gates.