The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Mar. 30, 1998
Harold S Crafts, Colorado Springs, CO (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
The plurality of memory cells of a dynamic random access memory (DRAM) are formed in a well of one majority carrier type, and the well is located in a substrate of the other majority carrier type. The well electrically isolates the memory cells from electrical noise signals created by current in the substrate and charged carriers created by alpha particles. The well is connected at multiple spaced-apart locations to a referencing conductor, to maintain the well at a uniform potential in response to noise. The memory cells are formed in a single well, or groups of the memory cells are each formed in a separate well. A shielding conductor, such as the mesh or an integrally continuous layer of metal which is spaced from the memory cells, overlays a matrix of the memory cells and shields then from the effects of noise.