The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Mar. 30, 1998
Tzong-Shi Jan, Hsinchu, TW;
Yen-Tai Lin, Hsinchu, TW;
Abstract
A first mask includes a well mask formed over a first portion of the wafer to define a first conductive type well in the wafer. A first polysilicon mask is formed over the well mask including a plurality of first structures and a plurality of second structures to cover a first polysilicon layer, thereby defining polysilicon gates. A first implanting mask is formed over the first polysilicon mask for forming second conductive type region. A second implanting mask is formed over the first polysilicon mask for forming first conductive type region. A second polysilicon mask is formed between gates of a second conductive type MOS and gates of a first conductive type MOS. A contact hole mask is formed over the second polysilicon mask for forming contact holes. A metal mask is formed over the contact hole mask for forming connection.