The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Jan. 20, 1998
Kazuya Kumagai, Tenri, JP;
Hiroaki Kudo, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The amplification type solid-state imaging device of this invention includes amplification type photoelectric converting elements arranged in a matrix. Each of the amplification type photoelectric converting elements includes: a transistor formed at a surface of a semiconductor substrate, for accumulating signal charge generated from incident light on a portion of the transistor at the surface of the semiconductor substrate and outputting an output signal comprising a change in an electric signal corresponding to the accumulated signal charge; a gate region formed adjacent to the transistor, including a portion of the semiconductor substrate, an insulating film formed on the portion of the semiconductor substrate, and a gate electrode formed on the insulating film, the gate region allowing the accumulated signal charge to move from the surface of the semiconductor substrate to the inside of the semiconductor substrate; and an output impedance converting section connected to the photoelectric converting elements which sequentially receives the output signals from the amplification type photoelectric converting elements, the output impedance converting section including a driving transistor driven with the output signals and a load transistor.