The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Jan. 29, 1998
Applicant:
Inventor:
Tomotaka Fujisawa, Tokyo, JP;
Assignee:
Sony Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438706 ; 438712 ; 438723 ; 438724 ;
Abstract
In a semiconductor device manufacturing method for etching an insulating film on the surface of a silicon semiconductor to expose the surface of the silicon semiconductor, and then forming a thin film so as to cover at least the etched portion. Simultaneously with or after etching, an SiC film is formed on the surface of a semiconductor which is exposed by the etching, and a thin film is formed on the SiC film without removing the SiC film. Specifically, the etching is performed by using carbon-based etching gas, for example, to form the SiC film simultaneously with the etching.