The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Apr. 29, 1998
Stanley R Clayton, San Diego, CA (US);
Stephen D Russell, San Diego, CA (US);
Oswald I Csanadi, San Diego, CA (US);
Shannon D Kasa, San Diego, CA (US);
Charles A Young, San Diego, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method is provided for improving silicide formation, and the electrical ntact provided thereby, on non-planar silicon structures. In this method, a semiconductor device structure is initially formed having non-planar surface regions. A metal layer is deposited on the non-planar surfaces. The metal deposition process step is followed by an off-axis implantation of non-dopant ions, causing a mixing of the metal and silicon atoms at the metal and non-planar silicon structure interface. The off-axes implantation also serves to disrupt the native silicon dioxide layer between the silicon and metal layers regions. Thermal processing is then used to form silicide on the non-planar surfaces of the semiconductor silicon structure.