The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Apr. 12, 1996
Applicant:
Inventors:
Assignee:
Nippon Oil Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 73 ; 117919 ; 117925 ; 117927 ; 438385 ; 438398 ;
Abstract
A method of producing a semiconducting material comprises reacting one or more of halogenosilanes with an alkali metal and/or an alkaline earth metal in an inert solvent to give a condensate and thermally decomposing the condensate. The condensate is dissolved in a suitable solvent such as toluene and tetrahydrofuran and applied by casting to a suitable substrate. The resulting semiconductor material in its film form has an optical band-gap (EO) of usually 0.1-4.0 eV.
Quick Actions:
Ikai, Keizo. (1999). Method of producing a semiconducting material (U.S. Patent No. 5997637). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5997637
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