The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Apr. 24, 1997
Stephen J Fonash, State College, PA (US);
Osama O Awadelkarim, State College, PA (US);
Murat Okandan, State College, PA (US);
Maria M Ozaita-Mintegui, Bilbao, ES;
The Penn State Research Foundation, University Park, PA (US);
Abstract
An approach using two terminal current measurements, preferably in a cyclic current-voltage sweeping procedure, and specialized test structure, is shown to be very useful in detecting processing induced changes in poly-Si/ultra-thin SiO.sub.2 /substrate Si structures. The charging current structure discernible in this approach is seen to have different features depending on processing history of the device. This is shown for the specific case of plasma gate definition etching with or without annealing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile