The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Nov. 06, 1997
Applicant:
Inventor:
Takenori Morikawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257184 ; 257431 ; 257432 ; 257448 ; 257466 ;
Abstract
A photodetector design is disclosed for preventing an electrode from being broken. A recess portion is formed in a semiconductor substrate. A light absorbing layer is formed in the recess portion, and a buffer layer is formed on the light absorbing layer. A contact layer is formed on the buffer layer. The height of the light absorbing layer can be set to minimize the effect of a step caused by facet formation. An insulating layer is formed outside of a recess portion to project from a main surface of the substrate. The anode electrode is formed on the insulating layer and substantially outside of the recess and, as a result, the electrode is less likely to be broken.