The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
May. 05, 1993
Hiroshi Sekii, Kyoto, JP;
Koichi Imanaka, Kyoto, JP;
Omron Corporation, Kyoto, JP;
Abstract
An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type on an upper portion of a luminescent layer. In one portion of the above-described layer, an area for a current path consisting of the second conductivity type is formed extending from the second semiconductor layer to the first semiconductor layer. An ohmic contact electrode is then created covering substantially the entire upper surface of the second semiconductor layer with the exception of the area defined for the current path.