The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Aug. 13, 1997
Applicant:
Inventor:
Esin Kutlu Demirlioglu, Cupertino, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 65 ; 257520 ;
Abstract
A trench refill for a semiconductor device is undertaken by depositing polycrystalline Ge or Ge.sub.x Si.sub.1-x alloy at temperatures as low as 500.degree. C. The structure is then oxidized at for example 700.degree. C. to obtain a cap oxide on the trench refill. This method causes avoidance of (1) void formation, (2) facet formation, and (3) necessity of a second insulator deposition and planarization, meanwhile achieving all these advantages at a low thermal budget.
Demirlioglu, Esin. (1999). Trench refill with selective polycrystalline materials (U.S. Patent No. 5994718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5994718
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