The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 1999

Filed:

Jan. 29, 1997
Applicant:
Inventors:

Jun Hayashi, Tokyo, JP;

Michiko Yamanaka, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438624 ; 438627 ; 438643 ; 438648 ; 438786 ; 438792 ;
Abstract

An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film. The fabrication process includes forming the interlayer insulation layer having a silicon oxide film by plasma CVD using silane and N.sub.2 O and processing an upper surface of the interlayer insulation layer by plasma under a nitrogen atmosphere to form a plasma processed nitrogen layer.


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