The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Jan. 24, 1997
Yasumasa Kashima, Tokyo, JP;
Tsutomu Munakata, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of fabricating an abrupt hetero interface by organometallic vapor growth comprises supplying a first Group III source gas at a predetermined flow rate and a first Group V source gas at a predetermined flow rate to a growth chamber during a first growth process to form a first Group III-Group V compound layer. During a growth interruption process, the inflow of the first Group III source gas to the growth chamber is stopped, while the supply of the first Group V source gas to the growth chamber is continued, to thereby interrupt the growth of the first Group III-Group V compound layer. Finally, during a second growth process, the first Group V source gas flowing into the growth chamber is switched to a second Group V source gas, and a second Group III source gas is simultaneously supplied at a predetermined flow rate to the growth chamber, thereby forming a second Group III-Group V compound layer on the first Group III-Group V compound layer.