The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
May. 04, 1998
Adrian Murphy, San Jose, CA (US);
Manickam Thavarajah, San Jose, CA (US);
LSI Logic Corporation, Milpitas, CA (US);
Abstract
An Integrated Circuit (IC) wafer test fixture includes a baseplate and a top plate. During testing, an IC wafer is positioned between the baseplate and top plate with annular rubber gaskets, forming sealed cavities above and below the IC wafer. A fluid pressure generator with a pressure gauge inserts a fluid under pressure into one of the cavities, causing the IC wafer to be subject to stress. The fluid distributes a uniform pressure load on the surface of the IC wafer. The pressure of the fluid may be gradually increased until a desired pressure is obtained or the wafer fails. The pressure at failure is recorded, and by calculation the failure stress of the IC wafer can be determined. A second embodiment of the test fixture includes a pressure vessel with a threaded sealed opening at the top and a stepped sealed opening at the bottom. The inner diameter of the insert is sized for an IC wafer. In use, the IC wafer is positioned on top of the insert, and the pressure vessel is sealed. A fluid pressure generator with a pressure gauge injects fluid under a controlled pressure within the sealed pressure chamber, stressing the IC wafer, as a uniform pressure load is distributed over the surface of the IC wafer. The pressure recorded, and by calculation the stress of the IC wafer may be determined.