The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Sep. 15, 1998
Applicant:
Inventor:
Hideki Hara, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518529 ; 36518518 ; 36518527 ; 365218 ;
Abstract
In a data erase operation of the present invention, a drain terminal is opened. A negative voltage of about -10 V and a voltage of about 5 V are applied to a cell gate and a source terminal, respectively. The voltage of about 1-2 V is applied to a P well terminal and an N well terminal. A ground potential is provided to a substrate. A voltage which is lower than the voltage of the source terminal and higher than the substrate voltage (ground voltage) is applied to a P well and an N well between a source diffusion layer and the substrate. Thus, an electric field generated between a source and a floating gate realizes the erase by means of F-N tunneling.