The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
May. 01, 1995
Applicant:
Inventors:
Satoshi Saito, Fukuyama, JP;
Toyohiro Harazono, Fukuyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257635 ; 257637 ; 257640 ;
Abstract
A semiconductor device comprising: a silicon nitride film formed on a semiconductor substrate having a first wiring layer; a first silicon oxide film formed on said silicon nitride film; and a second silicon oxide film formed on said first silicon oxide film by way of an atmospheric pressure CVD process using tetraethyl orthosilicate, siloxane, or disilazane as a source material.
Saito, Satoshi. (1999). Semiconductor device and method of fabricating the same (U.S. Patent No. 5990541). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5990541
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile