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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5990511 B1

PDFFull Text
Date of Patent:
Nov. 23, 1999

Filed:

Oct. 16, 1997

Memory cell with transfer device node in selective polysilicon

Applicant:
Inventor:

James M Leas, South Burlington, VT (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Whitham, Curtis & Whitham

Walter, Jr.; Howard J.

Primary Examiner:

Minh Loan Tran

Assistant Examiner:

Cuong Q Nguyen

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257301 ; 257306 ; 257296 ;
Abstract

A memory cell is constructed with one electrode of the transfer device extending over a trench capacitor, saving about 6.5% of cell area. Selective polysilicon for a strap seeded from the trench is grown in the same step in which selective single crystal silicon seeded from the substrate is grown for the transfer device. At least a portion of the node diffusion is located in single crystal epitaxial silicon extending over the trench. The process eliminates the need for a separate strap masking step.

Find Patent Forward Citations

Leas, James. (1999). Memory cell with transfer device node in selective polysilicon (U.S. Patent No. 5990511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5990511

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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