The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Dec. 24, 1997
Applicant:
Inventor:
Jae-Hee Ha, Chungcheongbuk-do, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438738 ; 438672 ; 438734 ; 438742 ;
Abstract
A method for forming a semiconductor device contact plug in a contact hole without a plug cavity. The method forms a contact hole on a substrate, and then forms a barrier layer in the contact hole. Next, a contact plug is formed on the barrier layer in the contact hole. After the formation of the contact plug, a portion of the barrier layer is selectively removed using a gas mixture of a first gas and a second gas. The first gas etches the barrier layer, and the second gas forms a protective layer to prevent a cavity from forming.