The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Sep. 11, 1996
Applicant:
Inventors:
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438723 ; 438695 ; 438714 ; 438637 ;
Abstract
The present invention is a method for improviding an oxide etching process by using a nitrogen-based plasma. An additional nitrogen-based plasma step is used to inhibit or delay the formation of observed residual bubbles during a dry etching process. The method comprises the steps of etching the oxide layer by reactive ion etching and immersing the oxide layer in a nitrogen plasma.