The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Aug. 27, 1997
Applicant:
Inventors:
Ju-seon Goo, Kyungki-do, KR;
Ji-hyun Choi, Seoul, KR;
Byung-keun Hwang, Kyungki-do, KR;
Hae-jeong Lee, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438473 ; 438474 ; 438471 ; 438477 ; 438782 ; 438783 ; 438798 ; 438800 ; 438624 ; 438631 ; 438697 ;
Abstract
An insulating layer may be fabricated on a microelectronic substrate by spinning a layer of spin-on-glass (SOG) on a microelectronic substrate and curing the SOG layer by irradiating the SOG layer with an electronic beam. Irradiating may take place simultaneously with heating the substrate to a temperature below about 500.degree. C. An underlying and/or overlying capping layer may also be provided. Alternatively, rather than irradiating the SOG layer, an overlying capping layer may be irradiated.