The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Nov. 05, 1997
Applicant:
Inventor:
Kenji Fukase, Ogaki, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438267 ; 438596 ;
Abstract
A split gate type transistor device and a method for making it. The transistor has a substrate, and a floating gate electrode is located on the substrate. A control gate electrode is provided having thick and thin film sections over the floating electrode. A source region and a drain region are formed separately in the substrate. The thin film section is formed partially over the drain region and impurity is passed into the substrate through the thin film section to form the drain region.
Fukase, Kenji. (1999). Semiconductor device and method for fabricating the same (U.S. Patent No. 5989960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5989960
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile