Method of manufacturing a complementary metal-oxide semiconductor device

Abstract

Disclosed is a method of manufacturing a complementary metal-oxide semiconductor device. The method includes the steps of: forming a plurality of field oxide layers; forming a screen oxide film on each surface of the first, second, third and fourth active regions; forming a first mask pattern for exposing first and second active regions; forming a N-type well to a selected depth from each surface of the exposed first and second active regions; forming a N-type ion implanted layer right beneath each surface of the first and second active regions; removing the first mask pattern; forming a second mask pattern for exposing the third active region; forming a P-type well to a selected depth from the surface of the exposed third active region; forming a first P-type ion implanted layer right beneath the surface of the third active region; removing the second mask pattern; forming a third mask pattern for exposing first and fourth active regions; forming a second P-type ion implanted layer for controlling a third threshold voltage right beneath each surface of the first and fourth active regions; and forming a gate electrode including a gate oxide film on the first, second, third and fourth active regions.