The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Sep. 24, 1997
Bahram Ghodsian, West Vancouver, CA;
Ash M Parameswaran, Port Moody, CA;
Marek Syrzycki, Coquitlam, CA;
Simon Fraser University, Burnaby, CA;
Abstract
Methods for forming field emission and/or field ionization structures with self-aligned gate electrode structures involve forming a cavity in a first face of a substrate and forming an oxide layer in the cavity. The oxide layer forms a mold for making a sharp field emission tip which will be exposed on a second face of the substrate. In a first method a gate electrode is formed in the substrate. The gate electrode is automatically spaced apart from and insulated from the tip by the oxide layer. The gate electrode may comprise a doped region in the substrate. In a variant method, a gate electrode is formed in a thin metal film deposited on the second face of the substrate. A photoresist mask is created by shining ultraviolet light on the first face of the substrate to expose the underside of a layer of photoresist deposited on the metal film in an area adjacent the tip mold. The mask is automatically aligned with the tip mold.