The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1999
Filed:
Nov. 10, 1997
Sang Man Bae, Kyoungki-do, KR;
Ki Ho Baik, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for forming resist patterns having two photoresist layers and an intermediate layer involves coating a primary photoresist film having a small thickness over an under layer, and exposing the primary photoresist film to light using a mask. Then, the primary photoresist film is developed, thereby forming a primary photoresist film pattern. An intermediate layer is formed over the entire exposed surface of a resulting structure, the intermediate layer being made of a spin on glass or plasma enhancement oxide. A secondary photoresist film is coated over the intermediate layer. The secondary photoresist film is exposed to light using the same mask as used for the primary photoresist film, and is developed to form a secondary photoresist pattern. A portion of the intermediate layer exposed through the secondary photoresist pattern is etched, forming a secondary photoresist pattern completely overlapping with the primary photoresist pattern so that the resulting resist pattern has a vertical profile.