The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 1999

Filed:

Mar. 20, 1998
Applicant:
Inventors:

Jun-Ichi Fujikata, Tokyo, JP;

Kazuhiko Hayashi, Tokyo, JP;

Hidefumi Yamamoto, Tokyo, JP;

Kunihiko Ishihara, Tokyo, JP;

Masafumi Nakada, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B / ;
U.S. Cl.
CPC ...
428212 ; 428692 ; 4286 / ; 4286 / ; 4286 / ; 4286 / ; 4286 / ; 428336 ; 428900 ; 360113 ; 338 / ; 324252 ;
Abstract

Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2 <Hr is satisfied between a bias magnetic field Hr of the antiferromagnetic thin film 5 and coercive force Hc.sub.2 of the other magnetic thin film 2. At least a part of the antiferromagnetic thin film 5 comprises NiMn of an fct structure. Alternatively, the antiferromagnetic thin film 5 comprises a two-layer structure composed of a CoO layer deposited on a NiO layer to a thickness between 10 and 40 angstroms.


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