The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Feb. 27, 1998
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor memory device is provided which incorporates a voltage generation circuit capable of generating a high voltage even when a low power voltage is applied to the device. To control the gate voltage of each cell included in a memory cell array, a negative voltage generating circuit connected to a row decoder is included in a boosting circuit. In the case of using a single power of a low voltage, the negative voltage generating circuit generates a negative high voltage during, for example, data erasing. The gate of each P-channel MOS transistor for data transfer is supplied with a pulse signal with an amplitude based on a voltage VCCH which is higher than an external power voltage VCC and obtained by boosting the voltage VCC. As a result, a high voltage can be transferred and output efficiently even if the external power voltage is low.