The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Nov. 19, 1998
Yoshihiro Tada, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A ferroelectric memory device which is less likely to be affected with imprint effect and a highly effective method for reducing the imprint effect of the ferroelectric memory cell. A data reversing latch circuit is disposed between a pair of bit lines BL0 and /BL0 and has capacitors C1 and C2. When data is read, it is possible to store the potentials on the pair of bit lines BL0 and /BL0 as charges in the capacitors C1 and C2, and to reverse the high-low relationship between the potentials on the bit lines BL0 and /BL0 and then back to the original relationship according to stored charges in the capacitors C1 and C2. In this way, the imprint effect of the memory cell MO may be automatically reduced when data is read by reversing the data in the memory MO connected to the bit lines BL0 and /BL0 and again reversing the data back to normal.