The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Sep. 03, 1997
Hideaki Kuroda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In a field effect semiconductor device, in order to increase the operation speed and to make the device finer by lowering the sheet resistance, and to lower the production cost by reducing the process steps, the diffusion layer 17 is surrounded by SiO.sub.2 films 16 and 34 covering the tungsten polycide layer 35 provided as the gate electrode and by the SiO.sub.2 film 12 in the device isolating region, and the titanium polycide layer 44 is brought into contact with the entire surface of the diffusion layer 17 while being extended on the SiO.sub.2 films 12 an d 16. Accordingly, a large allowance in aligning the contact hole 25 with respect to the titanium polycide layer 44 can be assured to make the contact compensation ion implantation unnecessary.