The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
May. 19, 1997
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257306 ; 257295 ; 257310 ;
Abstract
A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO.sub.3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.