The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Dec. 24, 1997
Hiroshi Mizuno, Osaka, JP;
Youichirou Mae, Osaka, JP;
Hidenori Shibata, Osaka, JP;
Kazuo Tsuzuki, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An inverter-type basic cell, with a hexagonal contour, comprises one CMOS device pair arrangement including an n-channel transistor and a p-channel transistor. The inverter-type basic cell has a gate region annularly formed and connected in parallel with the n-channel and p-channel transistors, a sectoral drain diffusion region having a vertex at the center of the annularly-formed gate region, and a source diffusion region that is formed outside of the gate region in such a way as to define a shape having two opposing sides that lie on the prolongation of the two radii of the sectoral drain diffusion region.