The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Oct. 12, 1993
John F Currie, Montreal, CA;
Chetlur S Sundararaman, Montreal, CA;
La Corporation de L'ecole Polytechnique, Quebec, CA;
Abstract
The channel region of the FET device has a first portion adjacent the source which has a higher bandgap energy or a higher electron affinity than a remaining portion of the channel. A quasi-electric field in the channel near the source is intensified and as a result, accelerates charge carriers in the channel and increases switching speed. An infrared controlled FET device is also disclosed in which a low bandgap channel layer has a large bandgap layer deposited on it to result in a conduction band discontinuity at the junction between the large bandgap semiconductor layer and the low bandgap channel layer and a two-dimensional electron gas (2DEG) channel in the low bandgap channel layer so that photons reaching the 2DEG eject charges and allow conduction through the channel layer.