The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Feb. 25, 1998
Applicant:
Inventor:
Koichi Hasegawa, Chichibu, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 94 ; 257 13 ; 257 86 ; 257101 ; 438 47 ; 117 13 ; 117 19 ; 117 17 ; 117 21 ;
Abstract
An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration of not more than 1.times.10.sup.17 cm.sup.-3. A light-emitting diode is fabricated using the epitaxial wafer thus formed provided with electrodes.