The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Jun. 27, 1997
Toshiki Shinmura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of forming an interconnection within a high aspect ratio contact hole includes, forming a contact hole in an insulation film over a silicon substrate so that a diffusion layer, formed on a surface of the silicon substrate, is shown through the contact hole, removing spontaneous oxide film from a surface of the diffusion layer shown through the contact hole, heating at a temperature in the range of 350.degree. C. to 450.degree. C. the substrate to deposit a titanium film having a first thickness t1 by a collimated sputtering method, heating the substrate to deposit a titanium nitride film having a second thickness t2 by a collimated sputtering method, and heating the substrate to cause a titanium silicidation reaction at a boundary between the titanium film and the silicon diffusion layer thereby forming a titanium silicide film on the silicon diffusion layer at the bottom of the contact hole. Thereafter, a conductive film is formed which covers the titanium nitride film. Laminations of the conductive film, the titanium nitride film and the titanium film are patterned to form an interconnection in the contact hole.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile