The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Jun. 26, 1997
Applicant:
Inventors:
Yo Hwan Koh, Kyoungkido, KR;
Jin Hyeok Choi, Kyoungkido, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438410 ; 438404 ; 438405 ; 438154 ; 438165 ; 438219 ; 438225 ; 438227 ; 438425 ;
Abstract
A semiconductor device having an adjacent P-well and N-well, such as a complementary metal oxide semiconductor (CMOS) transistor, on a silicon on insulator (SOI) substrate has a latch-up problem caused by the parasitic bipolar effect. This invention provides a semiconductor device removing the latch-up problem and methods for fabricating the same. A semiconductor device according to the present invention has a T-shaped field oxide layer connected to a buried oxide layer of the SOI substrate to prevent the latch-up problem.