The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Sep. 01, 1995
Applicant:
Inventor:
Dean Jennings, San Ramon, CA (US);
Assignee:
Elantec Semiconductor, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438311 ; 438368 ; 438370 ; 438371 ; 438473 ; 438510 ; 438517 ; 438545 ; 438526 ; 438542 ; 438914 ; 438967 ; 257347 ; 257607 ;
Abstract
A silicon on insulator (SOI) process is disclosed which includes the steps of forming an etch stop layer in a starting wafer, forming an insulating layer on the etch stop layer, bonding this wafer to a handle wafer, thinning the start wafer down to the etch stop and then recovering a device layer from the etch stop layer by outgassing dopants from the etch stop layer.