The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Sep. 26, 1994
Hideharu Miyake, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention provides a stacked capacitor cell structure for a semiconductor memory device. The cell includes a transistor formed in an active region in a surface of a semiconductor substrate; a first inter-layer insulator both overlying the transistor and having a contact hole over the transistor; a second inter-layer insulator both overlying the first inter-layer insulator and having a through hole with a larger diameter than the diameter of the contact hole; a stacked capacitor both formed within the through hole formed in the second inter-layer insulator and comprising a storage electrode electrically connected to the transistor through the contact hole, a capacitive insulation film and an opposite electrode; and a third inter-insulator overlying both the stacked capacitor and the second inter-layer insulator.