The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Oct. 29, 1993
Han-Tzong Yuan, Dallas, TX (US);
Alan Carter Seabaugh, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A multiple peak resonant tunneling diode (10) includes multiple vertical semiconductor structures (12, 13). The vertical structures (12, 13) include a resonant tunneling diode having a predetermined cross-sectional area and a series resistor of a predetermined resistance. The vertical structures (12, 13) are spaced from one another and interconnected in parallel. Additionally, the vertical semiconductor structures (12, 13) are fabricated such that their predetermined diode cross-sectional areas and series resistances have values that vary by predetermined amounts to adjust the respective peak currents and/or peak voltages of the vertical semiconductor structures (12, 13).