The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Feb. 27, 1998
Kazuhide Koyama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed is a semiconductor device having a structure in which even if a misalignment occurs an upper trench and a connection hole, that is, the upper trench is offset from the connection hole, it is possible to suppress a reduction in contact area between an interconnection material and a connection hole burying material and hence to reduce an increase in contact resistance, and which is particularly suitable for a borderless trench interconnection structure, and a method of fabricating the semiconductor device. The semiconductor device includes: a substrate; an interlayer insulating film formed on the substrate; a connection hole formed in the interlayer insulating film; a connection plug formed by burying the connection hole with a connection hole burying material; a trench formed in the interlayer insulating film; and a trench interconnection formed by burying the trench with an interconnection material. In such a semiconductor device, the connection plug enters in the trench interconnection in such a manner that at least part of a side surface of sid connection plug is brought in contact with the trench interconnection.