The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Dec. 05, 1996
Applicant:
Inventors:
Hiroshi Goto, Kawasaki, JP;
Hiromi Hayashi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438621 ; 438598 ; 438655 ; 438738 ; 438751 ;
Abstract
A metal utilized for forming a silicide film is left even after completion of the reaction to produce silicide. A conductive film made of a material other than the metal is grown on the metal. A local interconnection overlapping the silicide layer is formed by the conductive film and the metal remaining after formation of silicide.
Goto, Hiroshi. (1999). Method for manufacturing a semiconductor device (U.S. Patent No. 5981372). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5981372
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile