The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Mar. 20, 1998
Kent Kuohua Chang, Cupertino, CA (US);
David Chi, Sunnyvale, CA (US);
Yuesong He, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In one embodiment, the present invention relates to a method of forming a flash memory cell involving the steps of: forming a tunnel oxide on a substrate; forming an in situ phosphorus doped polysilicon layer over the tunnel oxide by low pressure chemical vapor deposition at a temperature between about 610.degree. C. and about 630.degree. C., wherein the in situ phosphorus doped polysilicon layer comprises from about 1.times.10.sup.19 atoms/cm.sup.3 to about 5.times.10.sup.19 atoms/cm.sup.3 of phosphorus; forming an insulating layer over the in situ phosphorus doped polysilicon layer; forming a conductive layer over the insulating layer; etching the in situ phosphorus doped polysilicon layer, the conductive layer and the insulating layer, thereby defining one or more stacked gate structures; and forming a source region and a drain region in the substrate, wherein the source region and the drain region are self-aligned by the stacked gate structures, thereby forming one or more memory cells.