The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Jun. 12, 1997
Chang Jae Lee, Chugcheongbuk-Do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method of fabricating a CMOSFET includes the steps of selectively forming first and second conductive type wells in a semiconductor substrate, forming an isolation insulating layer at interface of the first and second conductive type wells, forming a first gate electrode formed of a first conductive type electrode over a predetermined area of the second conductive type well and a second gate electrode successively formed of a second conductive type electrode, a diffusion preventing layer, and the first conductive type electrode over a predetermined area of the first conductive type well, forming sidewall spacers on both sides of each of the first and second gate electrodes, forming second and first conductive type impurity regions under surfaces of the first and second conductive type wells, respectively, at both sides of the first and second gate electrodes and the their sidewall spacers, and forming a silicide layer on the first and second gate electrodes and on the semiconductor substrate where the first and second conductive type impurity regions are.