The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Nov. 26, 1997
Applicant:
Inventors:
Dean Tran, Westminster, CA (US);
William L Jones, Inglewood, CA (US);
Harvey N Rogers, Playa del Rey, CA (US);
Assignee:
TRW Inc., Redondo Beach, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; G03F / ;
U.S. Cl.
CPC ...
4302701 ; 556410 ; 556420 ;
Abstract
A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.
Tran, Dean. (1999). Chemically treated photoresist for withstanding ion bombarded processing (U.S. Patent No. 5981143). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5981143
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile