The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 1999

Filed:

May. 12, 1998
Applicant:
Inventors:

Takuya Tsukagoshi, Nagano, JP;

Masanori Kosuda, Nagano, JP;

Hiroshi Shingai, Nagano, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428 641 ; 428 644 ; 428 645 ; 428913 ; 43027013 ; 4304951 ; 430945 ; 369283 ; 369288 ;
Abstract

An optical recording medium of phase change type with an increased number of overwritable operations and method for preparing such an optical recording medium is provided. In the optical recording medium of phase change type whose rate determining stage in the production has been the initialization of the recording layer, the time required for the production is reduced, and stable recording/reproducing properties are realized from the first overwriting operation. The optical recording medium comprises a transparent substrate and a recording layer on the transparent substrate. In the medium, the recording layer comprises at least one Sb-based thin film and at least one reactive thin film; the Sb-based thin film is in contact with said reactive thin film; the Sb-based thin film has been formed from an Sb-based material containing at least 95 at % of Sb; and the reactive thin film has been formed from an In-Ag-Te-based material mainly comprising In, Ag and Te or In, Ag, Te and Sb; and the reactive thin film contains 0.5 to 10 at % of oxygen. In the formation of the reactive thin film, the sputtering is conducted by introducing an inert gas and oxygen gas into the sputtering chamber.


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