The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Dec. 18, 1997
Srinagesh Satyanarayana, Brewster, NY (US);
Pawan Gogna, Yorktown Heights, NY (US);
Philips Electronics North America Corporation, New York, NY (US);
Abstract
A method of biasing an MOS IC includes the steps of providing the IC with two MOS transistors having substantially similar characteristics and maintaining these two transistors at different temperatures. During operation of the IC, an output voltage is generated from each of the two transistors, and a bias voltage is generated as a function of the difference between the two output voltages. This bias voltage is then fed back to the gate terminals of the two MOS transistors to set the bias voltage to a steady-state level at which the circuit will operate at a zero temperature coefficient point. This bias voltage is also coupled to the gate electrodes of other transistors within the IC, to operate these transistors at the zero temperature coefficient point. An IC operated in accordance with biasing method will exhibit superior stability with variations in ambient temperature.