The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Feb. 05, 1998
Akira Inoue, Tokyo, JP;
Seiki Gotou, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor amplifier circuit receiving a high frequency signal and amplifying and outputting the signal includes a transistor for receiving the high frequency signal; and a waveform control connected to an input terminal of the transistor and controlling a negative value of the high frequency signal to be less than the gate breakdown voltage of the transistor and not below a negative threshold voltage. Therefore, a low distortion characteristic is available even when a transistor with a large magnitude of the gate breakdown voltage is manufactured. As a result, accuracy in controlling the value of the gate breakdown voltage during manufacturing is not required to be as high as in conventional manufacturing, resulting in a lower processing cost as well as improved yield.