The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Aug. 07, 1996
Applicant:
Inventor:
Tomohiro Ishikawa, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257451 ; 257449 ; 257 73 ; 257467 ; 257470 ; 2503383 ; 2503384 ;
Abstract
In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection section (5) and a backward bias connection section (6) formed for each semiconductor layer (1) to be forward and backward biases to an external bias voltage, and a metal thin film (2) for electrically connecting the semiconductor layers (1) to each other through both the forward bias connection section and the backward bias connection section (5 and 6).